Journal of Applied Science and Engineering

Published by Tamkang University Press

1.30

Impact Factor

2.10

CiteScore

Jium-Ming Lin This email address is being protected from spambots. You need JavaScript enabled to view it.1 and Wen-Jim Tsai1

1School of Mechanical Engineering and Astronautics, Chung-Hua University, Hsinchu, Taiwan 300, R.O.C.


 

Received: February 23, 2007
Accepted: April 16, 2007
Publication Date: June 1, 2007

Download Citation: ||https://doi.org/10.6180/jase.2007.10.2.03  


ABSTRACT


The vertical-type probe card of this paper used Si-wafer as substrate. The key point is to use buffer layers of low k elastomer, such as hydrogen silesquioxane, methyl sequioxane or PI (Polyimide), to release uneven forces due to either non-uniform profile of probe tips and ICs under test by the fabrication processes, or uneven strains and stresses during the burn-in tests. The electrical cross-coupling effects among the very dense probes can also be reduced by using low k elastomer. In addition, it can be applied for wafer level, and Test-During Burn-In (TDBI) to raise the efficiency and performance of test. For tip area as 10 μm x 10 μm, the amount of compression deformation can be obtained as 5.58 μm for 10 grams contact force, which can satisfy the industry specification of 5 μm. By the way it can meet the small requirements of pitch as well as bond pad area as the times go by.


Keywords: IC Probe Card, Wafer Level, TDBI, Low k Elastomer


REFERENCES


  1. [1] Hwang, R.-T. and Li, Wen-Shong, “Introduction of Wafer Level Probe Card,” Proceeding of Nanotechnology and Micro System Association, No. 9, pp. 8594 (2003). (in Chinese)
  2. [2] Lee, S. H. and Kim, B. C., “Curled Micro-Cantilevers Using Benzocyclobutene Polymer and Mo for Wafer Level Probing,” Sensors and Actuators A, Vol. 121, pp. 472479 (2005).
  3. [3] SoeJima, K., Kimura, M., Shimada, Y. and Aoyama, S., “New Probe Microstructure for Full-Wafer, Contact-Probe Cards,” IEEE Electronic Components and Technology Conference, pp. 16 (1999).
  4. [4] Kim, B. H., Park, S. and Lee, B., “A Novel MEMS Silicon Probe Card,” MEMS’02, Las, Vegas, Nevada,January, pp. 368371 (2002).
  5. [5] Kim, B. H., Park, S. J., Cho, D. I. and Chun, K., “Fabrication of Nickel Electroplated Cantilever-Type MEMS Probe Card with Through-Hole Interconnection,” Microprocessor and Nanotechno-logy Conference, Tokyo, Japan, pp. 170171 (2003).
  6. [6] Zhang, Y. W., Zhang, Y. X., Worsham, D., Morrow, D. and Marcus, R. B., “A New MEMS Wafer Probe Card,” MEMS’97, Nagoya, Japan, pp. 395399 (1997).
  7. [7] Ito, T., Sawada, R. and Higurashi, E., “Fabrication of Micro IC Probe for LSI Testing,” Sensors and Actuators A, Vol. 80, pp. 126131 (2000).
  8. [8] Zhang, Y., Zhang, Y. and Marcus, R. B., “Thermally Actuated Microprobes for a New Wafer Probe Card,” Journal of MEMS, Vol. 8, pp. 4349 (1999).
  9. [9] Kim, B. H., Park, S. J., Chun, K., Cho, D. I., Park, W. K., Jun, T. U. and Yun, S., “A Fine Pitch MEMS Probe Unit for Flat Panel Display as Manufacturing MEMS Application,” Sensors and Actuators A, Vol. A, pp. 4652 (2004).
  10. [10] Polak, J., Cycle Plasticity and Low Cycle Fatigue Life of Metals, ELSEVIER, Tokyo, pp. 170176 and 288 290 (1990).