Processing and Characterization of Microwave Dielectric Ceramics and Thin Films-Nd2(Ti2/3Al1/3)3O9-δ and (Ba0.7Sr0.3)TiO3

Hong-Wen Wang

doi:10.6180/jase.2002.5.2.07

Processing and Characterization of Microwave Dielectric Ceramics and Thin Films-Nd2(Ti2/3Al1/3)3O9-δ and (Ba0.7Sr0.3)TiO3

Chemistry / Biochemistry

Hong-Wen Wang This email address is being protected from spambots. You need JavaScript enabled to view it.¹

¹Department of Chemistry, Chung-Yuan Christian University, Chung-Li, 320, Taiwan, R.O.C.

Received: April 19, 2002
Accepted: May 24, 2002
Publication Date: June 1, 2002

Download Citation: ||https://doi.org/10.6180/jase.2002.5.2.07

ABSTRACT

Reactive powders of stoichiometry Nd₂(Ti_2/3Al_1/3)₃O_9-δ and thin films of (Ba_0.7Sr_0.3)TiO₃ have been prepared by the conventional mixed-oxide method and the metal-organic deposition method, respectively. The corresponded phases after calcination and sintering are investigated by XRD diffraction. Single phase of Nd₂(Ti_2/3Al_1/3)₃O_9-δ could be only obtained by sintering over 1400^o C for 4 h. (Ba_0.7Sr_0.3)TiO₃ thin film well crystallizes at as low as 570^o C after Au-doping by MOD method. Nd₂(Ti_2/3Al_1/3)₃O_9-δ posses excellent temperature stability of frequency. Substitution of Nd by Ca, Sr, or Pb can also readily form the single phase (Nd,X)₂Ti₃O_9-δ, but inferior microwave properties are observed. The leakage current of BST thin films are found to be reduced by doping Au or codoping Mg/La or Mg/Nb. Mg/La and Mg/Nb reduces leakage current even more when annealing is performed at high temperatures.

Keywords: Nd2(Ti2/3Al1/3)3O9-δ, (Ba0.7Sr0.3)TiO3, Microwave Dielectric Ceramic, Thin Film

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